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| MITSUBISHI SEMICONDUCTOR MGFS45V2527 2.5~2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION The MGFS45V2527 is an internally impedance matched GaAs power FET especially designed for use in 2.5~2.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE DRAWING Until : millimeters (inches) 240.3 (0.9450.012) (0.0240.006) 0.60.15 FEATURES Class A operation Internally matched to 50 () system High output power P1dB=30W (TYP.) @f=2.5~2.7GHz High power gain GLP=12dB (TYP.) @f=2.5~2.7GHz High power added efficiency add=45% (TYP.) @f=2.5~2.7GHz Loe distortion [item -51] IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L. R1.2 APPLICATION item 01 : 2.5~2.7GHz band power amplifier item 51 : 2.5~2.7GHz band digital radio communication 20.40.2 (0.8030.008) 16.7 (0.658) QUALITY GRADE IG RECOMMENDED BIAS CONDITIONS VDS=10V ID=6.5A RG=25 GF-38 (1) GATE (2) Source (FLANGE) (3) DRAIN ABSOLUTE MAXIMUM RATINGS (Ta=25C) Symbol VGDO VGSO ID IGR IGF PT Tch Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature *1 < Keep safety first in your circuit designs! > Unit Mitsubishi Electric Corporation puts the maximum effort into Ratings -15 -15 22 -61 76 88 175 -65 ~ +175 V making semiconductor products better and more reliable, V but there is always the possibility that trouble may occur A with them.Trouble with semiconductors may lead to personal mA mA W C C injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. Tstg Storage temperature *1 : Tc=25C ELECTRICAL CHARACTERISTICS (Ta=25C) Symbol VGS (off) P1dB GLP ID add IM3 Rth (ch-c) Parameter Saturated drain current Output power at 1dB gain compression Linear power gain Drain current Power added efficiency 3rd order IM distortion Thermal resistance *2 *1 Test conditions VDS=3V, ID=60mA Limits Min. -- 44 Typ. -- 45 12 7.5 45 -45 -- Max -5 -- -- -- -- -- 1.7 Unit V dBm dB A % dBc C/W VDS=10V, ID(RF off)=6.5A, f=2.5~2.7GHz 11 -- -- -42 Vf method -- *1 : Channel to case *2 : item -51, 2 tone test, Po=34.5dBm Single Carrier Level, f=2.5, 2.6, 2.7GHz,f=5MHz MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR MGFS45V2527 2.5~2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET TYPICAL CHARACTERISTICS P1dB,GLP vs. f 46 VDS=10(V) IDS=6.5(A) Po, add vs. Pin 16 50 Pout 45 15 40 VDS=10 (V) IDS=6.5(A) f=2.6 (GHz) 70 P1dB 60 45 50 44 GLP 14 35 40 43 13 30 add 25 30 20 42 12 20 10 41 2.45 2.5 2.55 2.6 2.65 FREQUENCY f (GHz) 2.7 11 2.75 15 15 20 25 30 35 INPUT POWER Pin (dBm) 0 Po,IM3 vs. Pin 42 40 38 36 34 IM3 VDS=10(V) IDS=6.5(A) f1=2.700(GHz) f2=2.705(GHz) 20 10 0 -10 -20 -30 -40 -50 -60 -70 14 16 18 20 22 24 26 28 30 32 34 INPUT POWER Pin (dBm S.C.L.) Po 32 30 28 26 24 S Parameters ( Tc=25C, VDS=10V, IDS=6.5A ) f (GHz) 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 S11 Magn. Angle(deg) 0.57 165 0.54 152 0.52 138 0.45 123 0.39 106 0.30 82 0.19 37 0.18 -25 0.30 -73 S-Parameter (TYP.) S21 S12 Angle(deg) Magn. Angle(deg) 50 0.03 15 36 0.04 0 21 0.04 -21 6 0.04 -35 -10 0.04 -60 -28 0.04 -73 -47 0.04 -89 -66 0.05 -117 -86 0.04 -133 S22 Angle(deg) -24 -37 -60 -82 -111 -134 -156 176 160 Magn. 4.25 4.35 4.40 4.49 4.60 4.68 4.68 4.57 4.29 Magn. 0.15 0.13 0.12 0.12 0.12 0.13 0.12 0.13 0.10 MITSUBISHI ELECTRIC |
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